PBSS4120T

NXP  PBSS4120T  单晶体管 双极, NPN, 20 V, 300 mW, 1 A, 470 hFE

The is a 1A NPN breakthrough-in small signal BISS Transistor in a plastic package provides ultra-low VCEsat and RCEsat parameters. It is suitable for use with the peripheral driver in low supply voltage applications and inductive load drivers.

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Low collector-emitter saturation voltage VCEsat

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High collector current capability IC and ICM

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High efficiency leading to less heat generation

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Reduced printed-circuit board requirements

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PNP complement is PBSS5120T

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3B Marking code