NXP PBHV8115Z 单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
The is a 1A NPN breakthrough-in small signal BISS Transistor in a medium power surface-mount plastic package with increased heat-sink.
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- High voltage
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- AEC-Q101 qualified
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- PNP complement is PBHV9115Z
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- V8115Z Marking code
针脚数 4
极性 NPN
耗散功率 700 mW
击穿电压集电极-发射极 150 V
集电极最大允许电流 1A
直流电流增益hFE 250
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 4
封装 SOT-223
封装 SOT-223
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Power Management, Industrial, Lighting, Communications & Networking, Motor Drive & Control, Automotive
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBHV8115Z NXP 恩智浦 | 当前型号 | 当前型号 |
PBHV8115Z,115 恩智浦 | 完全替代 | PBHV8115Z和PBHV8115Z,115的区别 |
PBHV8115T,215 恩智浦 | 功能相似 | PBHV8115Z和PBHV8115T,215的区别 |