NXP PBSS8110T 单晶体管 双极, NPN, 100 V, 300 mW, 1 A, 150 hFE
The is a 1A NPN breakthrough-in small signal BISS Transistor housed in a surface-mount plastic package.
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- Higher efficiency leading to less heat generation
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- Reduced printed-circuit board requirements
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- PNP complement is PBSS9110T
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- U8 Marking code
针脚数 3
极性 NPN
耗散功率 300 mW
击穿电压集电极-发射极 100 V
集电极最大允许电流 1A
直流电流增益hFE 150
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 3
封装 SOT-23
封装 SOT-23
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Power Management, Lighting, Industrial, Consumer Electronics, Automotive, Motor Drive & Control, Communications & Networking
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS8110T NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS8110T,215 恩智浦 | 完全替代 | PBSS8110T和PBSS8110T,215的区别 |
PBSS8110D,115 恩智浦 | 类似代替 | PBSS8110T和PBSS8110D,115的区别 |
PBSS8110S 恩智浦 | 类似代替 | PBSS8110T和PBSS8110S的区别 |