PBSS4032PZ

NXP  PBSS4032PZ  单晶体管 双极, PNP, -30 V, 130 MHz, 700 mW, -4.4 A, 350 hFE

The is a 4.4A PNP breakthrough-in small signal BISS Transistor in a medium power surface-mount plastic package with increased heat-sink.

.

Low collector-emitter saturation voltage VCEsat

.

Optimized switching time

.

High collector current capability IC and ICM

.

High collector current gain hFE at high IC

.

High energy efficiency due to less heat generation

.

Smaller required printed-circuit board PCB area than for conventional transistors

.

AEC-Q101 qualified

.

NPN complement is PBSS4032NZ

.

PB4032PZ Marking code