NXP PBSS4160DPN,115 双极- 射频功率晶体管, 220 MHz, 500 hFE, 1 A
The is a NPN-PNP BISS Transistor encapsulated in surface-mount plastic package. It offers low collector to emitter saturation voltage and high collector current capability. It is designed for use with complementary MOSFET driver, half and full bridge motor drivers and dual low power switches e.g. motors, fans applications.
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- High collector current gain at high IC
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- High efficiency due to less heat generation
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- Smaller required printed-circuit board PCB area than for conventional transistors
频率 220 MHz
极性 NPN, PNP
耗散功率 420 mW
击穿电压集电极-发射极 60 V
集电极最大允许电流 1A/0.9A
最小电流放大倍数hFE 250
最大电流放大倍数hFE 250 @1mA, 5V
额定功率Max 420 mW
直流电流增益hFE 500
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 700 mW
安装方式 Surface Mount
引脚数 6
封装 SC-74-6
宽度 1.7 mm
封装 SC-74-6
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Automotive, Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS4160DPN,115 NXP 恩智浦 | 当前型号 | 当前型号 |
BZX84-B10,215 恩智浦 | 功能相似 | PBSS4160DPN,115和BZX84-B10,215的区别 |