PBSS2540E,115

NXP  PBSS2540E,115  单晶体管 双极, NPN, 40 V, 450 MHz, 150 mW, 500 mA, 200 hFE

The is a 500mA NPN breakthrough-in small signal BISS Transistor housed in a surface-mount plastic package.

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Low collector-emitter saturation voltage VCEsat

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High collector current capability IC and ICM

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High collector current gain hFE at high IC

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High efficiency due to less heat generation

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Smaller required printed-circuit board PCB area than for conventional transistors

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PNP complement is PBS3540E

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1S Marking code