NXP PBSS4160T 单晶体管 双极, NPN, 60 V, 220 MHz, 270 mW, 1 A, 400 hFE
The is a 1A NPN breakthrough-in small signal BISS Transistor in a plastic package. It is suitable for use with the driver in low supply voltage applications and inductive load drivers.
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High efficiency, reduces heat generation
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- Reduces printed-circuit board area required
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- PNP complement is PBSS5160T
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- U5 Marking code
针脚数 3
极性 NPN
耗散功率 270 mW
最小电流放大倍数hFE 100
直流电流增益hFE 400
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1.25 W
安装方式 Surface Mount
引脚数 3
封装 SOT-23
长度 3 mm
宽度 1.4 mm
高度 1 mm
封装 SOT-23
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Industrial, Automotive, Power Management, Lighting, Communications & Networking, Signal Processing, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS4160T NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS4160T,215 恩智浦 | 功能相似 | PBSS4160T和PBSS4160T,215的区别 |
FMMT491 美台 | 功能相似 | PBSS4160T和FMMT491的区别 |
FMMT491A 威世 | 功能相似 | PBSS4160T和FMMT491A的区别 |