PDTC143ZT,235

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PDTC143ZT,235概述

TO-236AB NPN 50V 100mA

Compared to traditional BJ transistors, the NPN digital transistor from Semiconductors is meant to be used with digital signal processing circuits. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 100@10mA@5 V. It has a maximum collector emitter saturation voltage of 0.1@0.25mA@5mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.

PDTC143ZT,235中文资料参数规格
技术参数

极性 N-Channel, NPN

耗散功率 0.25 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 100 @10mA, 5V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 250 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买PDTC143ZT,235
型号: PDTC143ZT,235
制造商: NXP 恩智浦
描述:TO-236AB NPN 50V 100mA
替代型号PDTC143ZT,235
型号/品牌 代替类型 替代型号对比

PDTC143ZT,235

NXP 恩智浦

当前型号

当前型号

PDTC143ZT,215

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