N沟道 增强模式 横向场效应 射频 功率晶体管
Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 19500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C. This N channel RF power MOSFET operates in enhancement mode.
频率 500 MHz
额定电压DC 7.00 V
额定电流 4 A
耗散功率 19500 mW
输出功率 3 W
增益 20 dB
测试电流 50 mA
输入电容Ciss 54pF @7.5VVds
输出功率Max 3 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 19500 mW
额定电压 25 V
安装方式 Surface Mount
引脚数 14
封装 5X5-8
封装 5X5-8
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD54003L-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD54003-E 意法半导体 | 功能相似 | PD54003L-E和PD54003-E的区别 |
PD54003S-E 意法半导体 | 功能相似 | PD54003L-E和PD54003S-E的区别 |
PD54003L 意法半导体 | 功能相似 | PD54003L-E和PD54003L的区别 |