RF功率晶体管， LDMOST塑料系列 RF power transistor, LDmoST plastic family
This RF amplifier from STMicroelectronics is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 31000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 150 °C. Its maximum frequency is 1000 MHz.
频率 870 MHz
耗散功率 31 W
漏源极电压Vds 25 V
漏源击穿电压 25 V
输出功率 2 W
增益 15 dB
测试电流 150 mA
输入电容Ciss 40pF @7VVds
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 31000 mW
额定电压 25 V
安装方式 Surface Mount
引脚数 14
封装 5X5-8
封装 5X5-8
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99