LdmoST 塑料系列 N沟道 增强模式 射频 功率晶体管
If you"re looking for a MOSFET that is compatible with radio frequency environments, this RF amplifier from STMicroelectronics is for you! Its maximum power dissipation is 4750 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.
频率 960 MHz
额定电压DC 65.0 V
额定电流 250 mA
极性 N-Channel
耗散功率 4.75 W
漏源极电压Vds 65.0 V
漏源击穿电压 65.0 V
连续漏极电流Ids 250 mA
输出功率 2 W
增益 15 dB
测试电流 10 mA
输入电容Ciss 7.1pF @28VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 4750 mW
额定电压 65 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
长度 7.5 mm
宽度 9.4 mm
高度 3.5 mm
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD57002-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD57002 意法半导体 | 功能相似 | PD57002-E和PD57002的区别 |