PD84001

STMICROELECTRONICS  PD84001  晶体管, 射频FET, 18 V, 1.5 A, 6 W, 1 GHz, SOT-89

射频 MOSFET ，STMicroelectronics

射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。

### MOSFET 晶体管，STMicroelectronics

得捷:
FET RF 18V 870MHZ

立创商城:
N沟道 18V 1.5A 停产

欧时:
### 射频 MOSFET 晶体管，STMicroelectronics射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。### MOSFET 晶体管，STMicroelectronics

艾睿:
If you need a MOSFET for radio frequency environments, STMicroelectronics offers this PD84001 RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 6000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans MOSFET N-CH 18V 1.5A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans RF MOSFET N-CH 18V 1.5A 4-Pin3+Tab SOT-89 T/R

Verical:
Trans RF MOSFET N-CH 18V 1.5A 4-Pin3+Tab SOT-89 T/R

Newark:
# STMICROELECTRONICS  PD84001  RF FET Transistor, 18 V, 1.5 A, 6 W, 1 GHz, SOT-89

儒卓力:
**N-CH RF-MOSFET 18V 2A SOT89 **

力源芯城:
18V,1.5A,N沟道射频功率MOSFET

DeviceMart:
TRANS RF POWER LDMOST