PD84006-E

Trans RF MOSFET N-CH 25V 5A 3Pin PowerSO-10RF Formed lead Tube

By using a combination of metal-oxide-semiconductor technology, this RF amplifier from STMicroelectronics can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 59000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.