PD54008-E

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PD54008-E概述

RF功率晶体管, LDMOST塑料家族的N沟道增强模式,横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Do you need a transistor that will operate at high frequencies? Then this RF amplifier from STMicroelectronics is perfect for you! Its maximum power dissipation is 73000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 500 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode.

PD54008-E中文资料参数规格
技术参数

频率 500 MHz

额定电压DC 25.0 V

额定电流 5 A

耗散功率 73000 mW

漏源极电压Vds 25.0 V

连续漏极电流Ids 5.00 A

输出功率 8 W

增益 11.5 dB

测试电流 150 mA

输入电容Ciss 91pF @7.5VVds

工作温度Max 165 ℃

工作温度Min -65 ℃

耗散功率Max 73000 mW

额定电压 25 V

封装参数

安装方式 Surface Mount

引脚数 3

封装 PowerSO-10

外形尺寸

封装 PowerSO-10

物理参数

工作温度 -65℃ ~ 165℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买PD54008-E
型号: PD54008-E
描述:RF功率晶体管, LDMOST塑料家族的N沟道增强模式,横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
替代型号PD54008-E
型号/品牌 代替类型 替代型号对比

PD54008-E

ST Microelectronics 意法半导体

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当前型号

PD54008L-E

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