RF功率晶体管, LDMOST塑料家族的N沟道增强模式,横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Do you need a transistor that will operate at high frequencies? Then this RF amplifier from STMicroelectronics is perfect for you! Its maximum power dissipation is 73000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 500 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode.
频率 500 MHz
额定电压DC 25.0 V
额定电流 5 A
耗散功率 73000 mW
漏源极电压Vds 25.0 V
连续漏极电流Ids 5.00 A
输出功率 8 W
增益 11.5 dB
测试电流 150 mA
输入电容Ciss 91pF @7.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 73000 mW
额定电压 25 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10
封装 PowerSO-10
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
PD54008-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD54008L-E 意法半导体 | 功能相似 | PD54008-E和PD54008L-E的区别 |
PD54008TR-E 意法半导体 | 功能相似 | PD54008-E和PD54008TR-E的区别 |