RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Amplifying and switching electronic signals fast and reliably can be done with this RF amplifier from STMicroelectronics specified for radio frequency environments. Its maximum power dissipation is 52800 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.
频率 500 MHz
额定电压DC 40.0 V
额定电流 4 A
耗散功率 52.8 W
漏源极电压Vds 40.0 V
连续漏极电流Ids 4.00 A
输出功率 8 W
增益 17 dB
测试电流 150 mA
输入电容Ciss 58pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 52800 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10
长度 7.5 mm
宽度 9.4 mm
高度 3.5 mm
封装 PowerSO-10
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
PD55008S-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD55008STR-E 意法半导体 | 完全替代 | PD55008S-E和PD55008STR-E的区别 |
PD55008-E 意法半导体 | 类似代替 | PD55008S-E和PD55008-E的区别 |
PD55008 意法半导体 | 类似代替 | PD55008S-E和PD55008的区别 |