



LdmoST 塑料系列 N沟道 增强模式 射频 功率晶体管
Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 95000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode.
频率 870 MHz
额定电流 8 A
耗散功率 95000 mW
漏源极电压Vds 40 V
输出功率 15 W
增益 17 dB
测试电流 350 mA
输入电容Ciss 76pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 95000 mW
额定电压 40 V
引脚数 3
封装 PowerSO-10RF
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD85035-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD85035TR-E 意法半导体 | 完全替代 | PD85035-E和PD85035TR-E的区别 |