RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
This RF amplifier from STMicroelectronics works in radio frequency environments and can be used to amplify and switch between electronic signals. Its maximum power dissipation is 95000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz.
频率 500 MHz
额定电流 7 A
耗散功率 95 W
输出功率 35 W
增益 16.9 dB
测试电流 200 mA
输入电容Ciss 92pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 95000 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
长度 7.5 mm
宽度 9.4 mm
高度 3.5 mm
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
PD55035-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD55035S-E 意法半导体 | 类似代替 | PD55035-E和PD55035S-E的区别 |
PD55035STR-E 意法半导体 | 类似代替 | PD55035-E和PD55035STR-E的区别 |
PD55035S 意法半导体 | 功能相似 | PD55035-E和PD55035S的区别 |