30W 945MHZ 28 PowerSO-10 射频（鸥翼）
Implement a switching capability into your circuit design with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 52800 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
频率 945 MHz
额定电压DC 65.0 V
额定电流 4 A
耗散功率 52.8 W
输入电容 57 pF
漏源极电压Vds 65.0 V
连续漏极电流Ids 4.00 A
输出功率 30 W
增益 14 dB
测试电流 50 mA
输入电容Ciss 57pF @28VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 52800 mW
额定电压 65 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD57030-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD57030S-E 意法半导体 | 类似代替 | PD57030-E和PD57030S-E的区别 |
PD57030S 意法半导体 | 类似代替 | PD57030-E和PD57030S的区别 |
PD57030 意法半导体 | 功能相似 | PD57030-E和PD57030的区别 |