PD57070-E

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PD57070-E概述

RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Implement a switching capability into your circuit design with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 95000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode.

PD57070-E中文资料参数规格
技术参数

频率 945 MHz

耗散功率 95000 mW

输出功率 70 W

增益 14.7 dB

测试电流 250 mA

输入电容Ciss 91pF @28VVds

工作温度Max 165 ℃

工作温度Min -65 ℃

耗散功率Max 95000 mW

额定电压 65 V

封装参数

安装方式 Surface Mount

引脚数 3

封装 PowerSO-10RF

外形尺寸

封装 PowerSO-10RF

物理参数

工作温度 -65℃ ~ 165℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买PD57070-E
型号: PD57070-E
描述:RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
替代型号PD57070-E
型号/品牌 代替类型 替代型号对比

PD57070-E

ST Microelectronics 意法半导体

当前型号

当前型号

PD57070S-E

意法半导体

完全替代

PD57070-E和PD57070S-E的区别

PD57070S

意法半导体

类似代替

PD57070-E和PD57070S的区别

BLF0810S-180

飞利浦

功能相似

PD57070-E和BLF0810S-180的区别

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