RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Implement a switching capability into your circuit design with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 95000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode.
频率 945 MHz
耗散功率 95000 mW
输出功率 70 W
增益 14.7 dB
测试电流 250 mA
输入电容Ciss 91pF @28VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 95000 mW
额定电压 65 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
PD57070-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD57070S-E 意法半导体 | 完全替代 | PD57070-E和PD57070S-E的区别 |
PD57070S 意法半导体 | 类似代替 | PD57070-E和PD57070S的区别 |
BLF0810S-180 飞利浦 | 功能相似 | PD57070-E和BLF0810S-180的区别 |