RF功率晶体管, LDMOST家庭 RF power transistor, LdmoST family
Description
The is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC European directive
频率 2 GHz
额定电流 7 A
针脚数 3
耗散功率 79 W
漏源极电压Vds 40 V
漏源击穿电压 40 V
输出功率 15 W
增益 11 dB
测试电流 350 mA
输入电容Ciss 55pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 79000 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
长度 7.5 mm
宽度 9.4 mm
高度 3.5 mm
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
PD20015-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD20015C 意法半导体 | 功能相似 | PD20015-E和PD20015C的区别 |
PD20015S-E 意法半导体 | 功能相似 | PD20015-E和PD20015S-E的区别 |