STMICROELECTRONICS PD84002 晶体管, 射频FET, 25 V, 2 A, 6 W, 1 GHz, SOT-89
The is a 25V N-channel Enhancement Mode Lateral Field Effect RF Power Transistor designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. Its superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader.
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- Excellent thermal stability
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- Common source configuration
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- ESD protection
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- High peak power
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- High ruggedness capability
ESD sensitive device, take proper precaution while handling the device.
频率 870 MHz
额定电流 2 A
针脚数 3
耗散功率 6 W
漏源极电压Vds 25 V
漏源击穿电压 25 V
输出功率 2 W
增益 15 dB
测试电流 100 mA
输入电容Ciss 16pF @7.5VVds
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 6000 mW
额定电压 25 V
安装方式 Surface Mount
引脚数 3
封装 SOT-89
封装 SOT-89
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 射频通信, 工业, Commercial, RF Communications, 商业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
香港进出口证 NLR