RF功率晶体管的LDMOST塑料系列 RF power transistors The LdmoST Plastic family
Do you need a transistor that will operate at high frequencies? Then this RF amplifier from STMicroelectronics is perfect for you! Its maximum power dissipation is 26700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 150 °C. This N channel RF power MOSFET operates in enhancement mode.
频率 500 MHz
额定电压DC 3.10 V
额定电流 5 A
极性 N-Channel
耗散功率 26.7 W
漏源极电压Vds 25 V
漏源击穿电压 25.0 V
连续漏极电流Ids 5.00 A
输出功率 8 W
增益 15 dB
测试电流 200 mA
输入电容Ciss 80pF @7.5VVds
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 26700 mW
额定电压 25 V
安装方式 Surface Mount
引脚数 14
封装 5X5-8
封装 5X5-8
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD54008L-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD54008S-E 意法半导体 | 功能相似 | PD54008L-E和PD54008S-E的区别 |
PD54008-E 意法半导体 | 功能相似 | PD54008L-E和PD54008-E的区别 |
PD54008TR-E 意法半导体 | 功能相似 | PD54008L-E和PD54008TR-E的区别 |