RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Used in radio frequency environments, this RF amplifier made from STMicroelectronics is ideal for amplifying and switching between electronic signals. Its maximum power dissipation is 26700 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C.
频率 870 MHz
额定电流 7 A
针脚数 8
耗散功率 26.7 W
漏源极电压Vds 25 V
输出功率 2 W
增益 15.5 dB
测试电流 250 mA
输入电容Ciss 57pF @7VVds
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 26700 mW
额定电压 25 V
引脚数 14
封装 5X5-8
封装 5X5-8
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD84008L-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD84008-E 意法半导体 | 功能相似 | PD84008L-E和PD84008-E的区别 |
PD84008S-E 意法半导体 | 功能相似 | PD84008L-E和PD84008S-E的区别 |