RF功率晶体管， LDMOST塑料家族的N沟道增强模式，横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
The most common usage for this RF MOSTFET from STMicroelectronics is in this power amplification mode. Its maximum power dissipation is 31700 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
频率 945 MHz
额定电流 2.5 A
耗散功率 31700 mW
输出功率 18 W
增益 16.5 dB
测试电流 100 mA
输入电容Ciss 34.5pF @28VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 31700 mW
额定电压 65 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD57018STR-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD57018TR-E 意法半导体 | 完全替代 | PD57018STR-E和PD57018TR-E的区别 |
PD57018 意法半导体 | 完全替代 | PD57018STR-E和PD57018的区别 |
PD57018-E 意法半导体 | 类似代替 | PD57018STR-E和PD57018-E的区别 |