RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
If you need a MOSFET for radio frequency environments, STMicroelectronics offers this RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 79000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.
频率 870 MHz
额定电流 7 A
耗散功率 79 W
漏源击穿电压 40 V
输出功率 10 W
增益 17.3 dB
测试电流 300 mA
输入电容Ciss 55pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 79000 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
长度 9.4 mm
宽度 7.5 mm
高度 3.5 mm
封装 PowerSO-10RF
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
PD85025STR-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD85025-E 意法半导体 | 完全替代 | PD85025STR-E和PD85025-E的区别 |
PD85025S-E 意法半导体 | 完全替代 | PD85025STR-E和PD85025S-E的区别 |
PD85025TR-E 意法半导体 | 类似代替 | PD85025STR-E和PD85025TR-E的区别 |