Trans RF MOSFET N-CH 40V 7A 3Pin PowerSO-10RF Formed lead T/R
Using semiconductor technology, this RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 79000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
频率 500 MHz
耗散功率 79000 mW
漏源极电压Vds 40 V
漏源击穿电压 12.5 V
输出功率 25 W
增益 14.5 dB
测试电流 200 mA
输入电容Ciss 86pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 79000 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF-2
封装 PowerSO-10RF-2
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD55025TR-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD55025S-E 意法半导体 | 功能相似 | PD55025TR-E和PD55025S-E的区别 |
PD55025-E 意法半导体 | 功能相似 | PD55025TR-E和PD55025-E的区别 |
PD55025 意法半导体 | 功能相似 | PD55025TR-E和PD55025的区别 |