PD84010S-E

PD84010S-E图片1
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PD84010S-E概述

RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Need a MOSFET that will work in radio frequency environments? This RF amplifier made from STMicroelectronics is perfect for switching and amplifying electronic signals. Its maximum power dissipation is 95000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.

PD84010S-E中文资料参数规格
技术参数

频率 870 MHz

额定电流 8 A

耗散功率 95 W

输出功率 10 W

增益 16.3 dB

测试电流 300 mA

输入电容Ciss 77pF @7VVds

工作温度Max 165 ℃

工作温度Min -65 ℃

耗散功率Max 95000 mW

额定电压 40 V

封装参数

安装方式 Surface Mount

引脚数 3

封装 PowerSO-10RF

外形尺寸

长度 7.5 mm

宽度 9.4 mm

高度 3.5 mm

封装 PowerSO-10RF

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买PD84010S-E
型号: PD84010S-E
描述:RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs
替代型号PD84010S-E
型号/品牌 代替类型 替代型号对比

PD84010S-E

ST Microelectronics 意法半导体

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PD84010-E

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PD84010TR-E

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