PD84008-E

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PD84008-E概述

RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

This RF amplifier from STMicroelectronics works in radio frequency environments and can be used to amplify and switch between electronic signals. Its maximum power dissipation is 79000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.

PD84008-E中文资料参数规格
技术参数

频率 870 MHz

额定电流 7 A

耗散功率 79000 mW

漏源极电压Vds 25 V

输出功率 2 W

增益 16.2 dB

测试电流 250 mA

输入电容Ciss 56pF @7VVds

工作温度Max 165 ℃

工作温度Min -65 ℃

耗散功率Max 79000 mW

额定电压 25 V

封装参数

引脚数 3

封装 PowerSO-10RF

外形尺寸

封装 PowerSO-10RF

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买PD84008-E
型号: PD84008-E
描述:RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
替代型号PD84008-E
型号/品牌 代替类型 替代型号对比

PD84008-E

ST Microelectronics 意法半导体

当前型号

当前型号

PD84008S-E

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类似代替

PD84008-E和PD84008S-E的区别

PD84008L-E

意法半导体

功能相似

PD84008-E和PD84008L-E的区别

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