PD57030S-E

PD57030S-E图片1
PD57030S-E图片2
PD57030S-E图片3
PD57030S-E图片4
PD57030S-E图片5
PD57030S-E概述

RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

If you"re looking for a MOSFET that is compatible with radio frequency environments, this RF amplifier from STMicroelectronics is for you! Its maximum power dissipation is 52800 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz.

PD57030S-E中文资料参数规格
技术参数

频率 945 MHz

额定电压DC 65.0 V

额定电流 4.00 A

耗散功率 52800 mW

漏源极电压Vds 65 V

连续漏极电流Ids 4.00 A

输出功率 30 W

增益 14 dB

测试电流 50 mA

输入电容Ciss 57pF @28VVds

工作温度Max 165 ℃

工作温度Min -65 ℃

耗散功率Max 52800 mW

额定电压 65 V

封装参数

安装方式 Surface Mount

引脚数 3

封装 PowerSO-10RF

外形尺寸

封装 PowerSO-10RF

物理参数

工作温度 -65℃ ~ 165℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买PD57030S-E
型号: PD57030S-E
描述:RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
替代型号PD57030S-E
型号/品牌 代替类型 替代型号对比

PD57030S-E

ST Microelectronics 意法半导体

当前型号

当前型号

PD57030-E

意法半导体

类似代替

PD57030S-E和PD57030-E的区别

PD57030

意法半导体

功能相似

PD57030S-E和PD57030的区别

PD57030S

意法半导体

功能相似

PD57030S-E和PD57030S的区别

锐单商城 - 一站式电子元器件采购平台