PD85006-E

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PD85006-E概述

Trans RF MOSFET N-CH 40V 2A 3Pin PowerSO-10RF Formed lead Tube

Do you need a transistor that will operate at high frequencies? Then this RF amplifier from STMicroelectronics is perfect for you! Its maximum power dissipation is 36500 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode.

PD85006-E中文资料参数规格
技术参数

频率 870 MHz

耗散功率 36500 mW

输出功率 6 W

增益 17 dB

测试电流 200 mA

输入电容Ciss 16pF @13.6VVds

工作温度Max 165 ℃

工作温度Min -65 ℃

耗散功率Max 36500 mW

额定电压 40 V

封装参数

引脚数 3

封装 PowerSO-10RF

外形尺寸

封装 PowerSO-10RF

物理参数

工作温度 -65℃ ~ 165℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买PD85006-E
型号: PD85006-E
描述:Trans RF MOSFET N-CH 40V 2A 3Pin PowerSO-10RF Formed lead Tube

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