RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
The most common usage for this RF MOSTFET from STMicroelectronics is in this power amplification mode. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. Its maximum frequency is 945 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode.
频率 945 MHz
耗散功率 20000 mW
漏源极电压Vds 65 V
输出功率 6 W
增益 15 dB
测试电流 70 mA
输入电容Ciss 27pF @28VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 20000 mW
额定电压 65 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD57006TR-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD57006STR-E 意法半导体 | 完全替代 | PD57006TR-E和PD57006STR-E的区别 |
PD57006-E 意法半导体 | 类似代替 | PD57006TR-E和PD57006-E的区别 |
PD57006S-E 意法半导体 | 类似代替 | PD57006TR-E和PD57006S-E的区别 |