RF功率晶体管, LDMOST塑料家族的N沟道增强模式,横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
If you need a MOSFET for radio frequency environments, STMicroelectronics offers this RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 31700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 1000 MHz.
频率 500 MHz
额定电流 2.5 A
耗散功率 31700 mW
输出功率 3 W
增益 17 dB
测试电流 50 mA
输入电容Ciss 36pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 31700 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
PD55003TR-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD55003 意法半导体 | 完全替代 | PD55003TR-E和PD55003的区别 |
PD55003STR-E 意法半导体 | 完全替代 | PD55003TR-E和PD55003STR-E的区别 |
PD55003-E 意法半导体 | 类似代替 | PD55003TR-E和PD55003-E的区别 |