PD55003TR-E

PD55003TR-E图片1
PD55003TR-E图片2
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PD55003TR-E概述

RF功率晶体管, LDMOST塑料家族的N沟道增强模式,横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

If you need a MOSFET for radio frequency environments, STMicroelectronics offers this RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 31700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 1000 MHz.

PD55003TR-E中文资料参数规格
技术参数

频率 500 MHz

额定电流 2.5 A

耗散功率 31700 mW

输出功率 3 W

增益 17 dB

测试电流 50 mA

输入电容Ciss 36pF @12.5VVds

工作温度Max 165 ℃

工作温度Min -65 ℃

耗散功率Max 31700 mW

额定电压 40 V

封装参数

安装方式 Surface Mount

引脚数 3

封装 PowerSO-10RF

外形尺寸

封装 PowerSO-10RF

物理参数

工作温度 -65℃ ~ 165℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买PD55003TR-E
型号: PD55003TR-E
描述:RF功率晶体管, LDMOST塑料家族的N沟道增强模式,横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
替代型号PD55003TR-E
型号/品牌 代替类型 替代型号对比

PD55003TR-E

ST Microelectronics 意法半导体

当前型号

当前型号

PD55003

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PD55003TR-E和PD55003的区别

PD55003STR-E

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完全替代

PD55003TR-E和PD55003STR-E的区别

PD55003-E

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类似代替

PD55003TR-E和PD55003-E的区别

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