PD55035S-E

RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 95000 mW. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.

得捷:
FET RF 40V 500MHZ PWRSO10

艾睿:
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF Straight lead

Chip1Stop:
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF Straight lead

DeviceMart:
TRANS RF N-CH FET LDMOST PWRSO10