PD57018-E系列 65 V 18 W N沟道 增强模式 横向MOSFET - PowerSO
Use this specially engineered RF amplifier from STMicroelectronics as a switching device in your electronic circuit design. Its maximum power dissipation is 31700 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
频率 945 MHz
额定电压DC 65.0 V
额定电流 2.5 A
针脚数 3
极性 N-Channel
耗散功率 31.7 W
输入电容 34.5 pF
漏源极电压Vds 65 V
漏源击穿电压 65.0 V
连续漏极电流Ids 2.50 A
输出功率 18 W
增益 16.5 dB
测试电流 100 mA
输入电容Ciss 34.5pF @28VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 31700 mW
额定电压 65 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
长度 9.5 mm
宽度 9.4 mm
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD57018-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD57018S-E 意法半导体 | 类似代替 | PD57018-E和PD57018S-E的区别 |
PD57018TR-E 意法半导体 | 类似代替 | PD57018-E和PD57018TR-E的区别 |
PD57018STR-E 意法半导体 | 类似代替 | PD57018-E和PD57018STR-E的区别 |