PD85035C

PD85035C图片1
PD85035C图片2
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PD85035C概述

RF功率晶体管 - LDMOST家庭 RF power transistor - LdmoST family

Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 108000 mW. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C.


得捷:
FET RF 40V 945MHZ M243


艾睿:
Amplifying and switching electronic signals in radio frequency environments is easy with this PD85035C RF amplifier from STMicroelectronics. Its maximum power dissipation is 108000 mW. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C.


Verical:
Trans RF FET N-CH 40V 8A 3-Pin Case M-243 Loose


PD85035C中文资料参数规格
技术参数

频率 945 MHz

额定电流 8 A

耗散功率 108000 mW

输出功率 15 W

增益 17.5 dB

测试电流 350 mA

输入电容Ciss 76pF @12.5VVds

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 108000 mW

额定电压 40 V

封装参数

引脚数 3

封装 M-243

外形尺寸

封装 M-243

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买PD85035C
型号: PD85035C
描述:RF功率晶体管 - LDMOST家庭 RF power transistor - LdmoST family

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