P6SMB12AHE3/5B

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P6SMB12AHE3/5B概述

Diode TVS Single Uni-Dir 10.2V 600W 2Pin SMB T/R

Surface Mount TRANSZORB® Transient Voltage Suppressors

**FEATURES**

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle: 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

**TYPICAL APPLICATIONS**

Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial and telecommunication.

P6SMB12AHE3/5B中文资料参数规格
技术参数

工作电压 10.2 V

击穿电压 11.4 V

耗散功率 600 W

钳位电压 16.7 V

脉冲峰值功率 600 W

最小反向击穿电压 11.4 V

工作温度Max 150 ℃

工作温度Min 65 ℃

封装参数

安装方式 Surface Mount

封装 DO-214AA

外形尺寸

封装 DO-214AA

物理参数

工作温度 -65℃ ~ 150℃

其他

产品生命周期 Discontinued at Digi-Key

包装方式 Tape & Reel TR

制造应用 汽车级

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买P6SMB12AHE3/5B
型号: P6SMB12AHE3/5B
描述:Diode TVS Single Uni-Dir 10.2V 600W 2Pin SMB T/R
替代型号P6SMB12AHE3/5B
型号/品牌 代替类型 替代型号对比

P6SMB12AHE3/5B

Vishay Semiconductor 威世

当前型号

当前型号

TPSMB12AHE3/52T

威世

完全替代

P6SMB12AHE3/5B和TPSMB12AHE3/52T的区别

TPSMB12AHE3/5BT

威世

完全替代

P6SMB12AHE3/5B和TPSMB12AHE3/5BT的区别

P6SMB12A-E3/52

威世

类似代替

P6SMB12AHE3/5B和P6SMB12A-E3/52的区别

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