Trans MOSFET N-CH 65V 20Pin DSO T/R
Summary of Features:
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Designed for wide RF bandwidth and low memory effects
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Broadband input on-chip matching
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Typical two-carrier WCDMA performance at 2140MHz, 28V, 7W avg,
\- Gain = 28.5dB
\- Power Added Efficiency = 33%
\- IMD3 = –32dBc
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Typical CW performance at 2140MHz, 28V
\- Output power at P1dB ~ 20W
\- Efficiency > 49%
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Integrated ESD protection. Meets HBM Class 1B minimum, per JESD22-A114F
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Capable of handling 10:1 VSWR @ 28 V, 15 W CW output power
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Thermally-enhanced RoHS-compliant package