PTFC210202FCV1R250XTMA1

射频金属氧化物半导体场效应RF MOSFET晶体管 RFP-LD10M

Summary of Features:

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Input matched

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Typical CW performance, 2170 MHz, 28 V, combined output

\- Output power at P1dB = 28 W

\- Efficiency = 62%

\- Gain = 20.9 dB

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Capable of handling 10:1 VSWR @28 V, 28 W CW output power

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Integrated ESD protection

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Low thermal resistance

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Pb-free and RoHS compliant

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Package: H-37248-4