射频金属氧化物半导体场效应RF MOSFET晶体管 RFP-LDMOS GOLDMOS 8
Summary of Features:
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Broadband internal matching
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Typical two-carrier WCDMA performance at 960 MHz, 30 V
\- Average output power = 32 W
\- Linear Gain = 17 dB
\- Efficiency = 29%
\- Intermodulation distortion = –37 dBc
\- Adjacent channel power = –39 dBc
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Typical CW performance, 960 MHz, 30 V,
\- Output power at P1dB = 150 W
\- Linear Gain = 17 dB
\- Efficiency = 54%
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Integrated ESD protection. Human Body Model, Class 2 minimum
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Excellent thermal stability, low HCI drift
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Capable of handling 10:1 VSWR @ 30 V,150 W CW output power
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Pb-free, RoHS-compliant
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Package: H-33288-6, bolt-down