PTFA212001EV4R250XTMA1

PTFA212001EV4R250XTMA1图片1
PTFA212001EV4R250XTMA1图片2
PTFA212001EV4R250XTMA1图片3
PTFA212001EV4R250XTMA1图片4
PTFA212001EV4R250XTMA1概述

Trans RF MOSFET N-CH 65V 3Pin Case 36260 T/R

Summary of Features:

.
Broadband internal matching
.
Typical two-carrier WCDMA performance at 2140 MHz, 30 V

\- Average output power = 50 W

\- Linear Gain = 15.8 dB

\- Efficiency = 28%

\- Intermodulation distortion = –35.5 dBc

\- Adjacent channel power = –40 dBc

.
Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB

\- Average output power = 70 W

\- Linear Gain = 15.5 dB

\- Efficiency = 34%

\- Adjacent channel power = –37 dBc

.
Typical CW performance, 2170 MHz, 30V

\- Output power at P–1dB = 220 W

\- Efficiency = 54%

.
Integrated ESD protection: Human Body Model, Class 2 minimum
.
Excellent thermal stability, low HCI drift
.
Capable of handling 5:1 VSWR @ 30 V, 200 W CW output power
.
Package : H-36260-2, bolt-down
PTFA212001EV4R250XTMA1中文资料参数规格
技术参数

频率 2.14 GHz

耗散功率 625000 mW

输出功率 50 W

增益 15.8 dB

测试电流 1.6 A

工作温度Max 200 ℃

工作温度Min -40 ℃

耗散功率Max 625000 mW

额定电压 65 V

封装参数

安装方式 Screw

引脚数 3

封装 H-36260-2

外形尺寸

封装 H-36260-2

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买PTFA212001EV4R250XTMA1
型号: PTFA212001EV4R250XTMA1
描述:Trans RF MOSFET N-CH 65V 3Pin Case 36260 T/R

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司