4A双低边MOSFET驱动
Switch on or off your high-power transistors with this power driver from STMicroelectronics. This device has a maximum propagation delay time of 40 ns and a maximum power dissipation of 650 mW. Its maximum power dissipation is 650 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This gate driver has a minimum operating temperature of -40 °C and a maximum of 105 °C. This device has a minimum operating supply voltage of 5 V and a maximum of 18 V.
上升/下降时间 45ns, 35ns
输出接口数 2
针脚数 8
耗散功率 1.4 W
上升时间 75 ns
下降时间 75 ns
下降时间Max 75 ns
上升时间Max 75 ns
工作温度Max 105 ℃
工作温度Min -40 ℃
耗散功率Max 650 mW
电源电压 5V ~ 18V
电源电压Max 18 V
电源电压Min 5 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PM8834TR ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PM8834 意法半导体 | 类似代替 | PM8834TR和PM8834的区别 |