NXP PBSS306NX,115 单晶体管 双极, NPN, 100 V, 110 MHz, 600 mW, 4.5 A, 40 hFE
The is a 4.5A NPN breakthrough-in small signal BISS Transistor in a small and flat lead surface-mount plastic package. It offers collector pad for good heat transfer.
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High efficiency due to less heat generation
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- Smaller required printed-circuit board PCB area than for conventional transistors
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- PNP complement is PBSS306PX
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- 5G Marking code
频率 110 MHz
针脚数 3
极性 NPN
耗散功率 600 mW
击穿电压集电极-发射极 100 V
集电极最大允许电流 4.5A
最小电流放大倍数hFE 100 @2A, 2V
额定功率Max 2.1 W
直流电流增益hFE 40
工作温度Max 150 ℃
工作温度Min -65 ℃
安装方式 Surface Mount
引脚数 3
封装 SOT-89-3
宽度 2.6 mm
封装 SOT-89-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 Power Management, Automotive, Industrial, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS306NX,115 NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS306NX 恩智浦 | 功能相似 | PBSS306NX,115和PBSS306NX的区别 |
ZX5T853ZTA 美台 | 功能相似 | PBSS306NX,115和ZX5T853ZTA的区别 |