PMD16K100

SOLID STATE  PMD16K100  单晶体管 双极, NPN, 100 V, 200 W, 20 A, 1000 hFE

The is a 100V Silicon NPN Darlington Power Transistor having monolithic epitaxial base structures with built-in base to emitter shunt resistors. The transistor is CVD glass passivated to increase reliability and provide reduced high temperature reverse leakage current. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during negative overshoot.

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Low thermal resistance for more useable power

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Hermetically sealed