NXP PSMN020-30MLCX 晶体管, MOSFET, N沟道, 31.8 A, 30 V, 0.0205 ohm, 4.5 V, 1.62 V
The is a N-channel enhancement-mode logic level MOSFET optimised for 4.5V gate drive utilising Superjunction technology. It is designed and qualified for use in a wide range of DC-to-DC converters, load switching, synchronous buck regulator and domestic equipment applications.
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- Low parasitic inductance and resistance
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- Ultra-low QG, QGD and QOSS for high system efficiencies at low and high loads
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- -55 to 175°C Junction temperature range
针脚数 5
漏源极电阻 0.0205 Ω
极性 N-Channel
耗散功率 33 W
阈值电压 1.62 V
漏源极电压Vds 30 V
连续漏极电流Ids 31.8A
上升时间 7.2 ns
输入电容Ciss 430pF @15VVds
额定功率Max 33 W
下降时间 5.1 ns
工作温度Max 175 ℃
耗散功率Max 33W Tc
安装方式 Surface Mount
引脚数 5
封装 LFPAK-33
封装 LFPAK-33
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Communications & Networking, Industrial, Power Management, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17