NXP PSMN2R7-30PL 晶体管, MOSFET, N沟道, 100 A, 30 V, 2.3 mohm, 10 V, 1.7 V
The is a N-channel MOSFET suitable for logic level gate drive sources. It is designed and qualified for use in a wide range of DC-to-DC converters, load switching, server power supplies and domestic equipment applications.
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- High efficiency due to low switching and conduction losses
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- -55 to 175°C Junction temperature range
针脚数 3
漏源极电阻 2.3 mΩ
极性 N-Channel
耗散功率 170 W
阈值电压 1.7 V
漏源极电压Vds 30 V
连续漏极电流Ids 100A
输入电容Ciss 3954pF @12VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 170 W
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.3 mm
宽度 4.7 mm
高度 16 mm
封装 TO-220
工作温度 -55℃ ~ 175℃
产品生命周期 Unknown
制造应用 Consumer Electronics, Power Management, Motor Drive & Control, Communications & Networking, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PSMN2R7-30PL NXP 恩智浦 | 当前型号 | 当前型号 |
PSMN015-60PS 恩智浦 | 类似代替 | PSMN2R7-30PL和PSMN015-60PS的区别 |
PSMN016-100PS 安世 | 功能相似 | PSMN2R7-30PL和PSMN016-100PS的区别 |