NXP PHC21025,118. 场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC
The is an intermediate level N-channel and P-channel complementary pair enhancement-mode FET in a plastic package using vertical D-MOS technology. It is designed and qualified for use in computing, synchronized rectification, motor and actuator driver applications.
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- Low conduction losses due to low ON-state resistance
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- Suitable for high frequency applications due to fast switching characteristics
针脚数 8
漏源极电阻 0.08 Ω
极性 N-Channel, P-Channel
耗散功率 2 W
阈值电压 2.8 V
漏源极电压Vds 30 V
连续漏极电流Ids 3.50 A
输入电容Ciss 250pF @20VVds
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Communications & Networking, Power Management, Industrial, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PHC21025,118 NXP 恩智浦 | 当前型号 | 当前型号 |
IRF9952TRPBF 英飞凌 | 功能相似 | PHC21025,118和IRF9952TRPBF的区别 |
IRF9952PBF 英飞凌 | 功能相似 | PHC21025,118和IRF9952PBF的区别 |
SI4532CDY-T1-GE3 威世 | 功能相似 | PHC21025,118和SI4532CDY-T1-GE3的区别 |