NXP PSMN1R2-30YLC 晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00105 ohm, 10 V, 1.46 V
The is a N-channel enhancement-mode logic level MOSFET optimised for 4.5V gate drive utilising NextPower Superjunction technology. It is designed and qualified for use in a wide range of DC-to-DC converters, lithium-ion battery protection, load switching, power O-ring, server power supplies, sync rectifier and domestic equipment applications.
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- Ultra-low QG, QGD and QOSS for high system efficiencies at low and high loads
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- Ultra-low RDS ON and low parasitic inductance
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- -55 to 175°C Junction temperature range
针脚数 4
漏源极电阻 0.00105 Ω
极性 N-Channel
耗散功率 215 W
阈值电压 1.46 V
漏源极电压Vds 30 V
连续漏极电流Ids 100A
输入电容Ciss 5093pF @15VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 215 W
安装方式 Surface Mount
引脚数 4
封装 SOT-669
长度 5 mm
宽度 4.1 mm
高度 1.1 mm
封装 SOT-669
工作温度 -55℃ ~ 175℃
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Power Management, Consumer Electronics, Industrial, Communications & Networking
RoHS标准 Exempt
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17