The is a NPN planar passivated Power Switching Transistor with integrated anti-parallel emitter-collector diode in a plastic single-ended leaded through hole package.
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High speed
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Fast switching
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High voltage capability
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High typical DC current gain
PHD13003C中文资料参数规格
技术参数
针脚数3
极性NPN
耗散功率2.1 W
直流电流增益hFE17
工作温度Max150 ℃
封装参数
安装方式Through Hole
引脚数3
封装TO-92
外形尺寸
封装TO-92
其他
产品生命周期Unknown
制造应用Industrial, Lighting, Consumer Electronics, Power Management