PMFPB8032XP

NXP  PMFPB8032XP  晶体管, MOSFET, P沟道+肖特基, 3 A, 20 V, 0.08 ohm, 4.5 V, -600 mV

The is a P-channel enhancement-mode small-signal FET using Trench MOSFET technology. It is combined with an ultra-low VF maximum efficiency general application Schottky diode and leadless ultra-thin surface-mount plastic package.

.

1.8V RDS ON rated for low-voltage gate drive

.

Small and leadless ultra thin SMD plastic package

.

Exposed drain pad for excellent thermal conduction

.

Integrated ultra low VF MEGA Schottky diode

.

-55 to 150°C Junction temperature range