MICRON PC28F256P33TFE 闪存, 或非, 256 Mbit, 32M x 8位, 52 MHz, 并行, BGA, 64 引脚
The is a 256MB parallel NOR Flash Embedded Memory features include high-performance synchronous-burst read mode, fast asynchronous access times, low power and flexible security options. The product family is manufactured using 65nm process technology. The NOR flash device provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage. Configuring the read configuration register enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with user-supplied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization. In addition to the enhanced architecture and interface, the device incorporates technology that enables fast factory PROGRAM and ERASE operations. Designed for low-voltage systems, the device supports READ operations with VCC at the low voltages and ERASE and PROGRAM operations with VPP at the low voltages or VPPH.
电源电压DC 2.30V min
供电电流 31 mA
针脚数 64
时钟频率 52 MHz
位数 16
存取时间 95 ns
内存容量 32000000 B
存取时间Max 95 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 2.3V ~ 3.6V
电源电压Max 3.6 V
电源电压Min 2.3 V
安装方式 Surface Mount
引脚数 64
封装 BGA-64
封装 BGA-64
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tray
制造应用 计算机和计算机周边, Consumer Electronics, 工业, Industrial, 消费电子产品, 通信与网络, Computers & Computer Peripherals, Communications & Networking
RoHS标准 RoHS Compliant
含铅标准 无铅
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
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PC28F256P33TFE Micron 镁光 | 当前型号 | 当前型号 |
PC28F256P33TFA 镁光 | 完全替代 | PC28F256P33TFE和PC28F256P33TFA的区别 |